SWI1N60 Hoja de datos - Xian Semipower Electronic Technology Co., Ltd.
Número de pieza
SWI1N60
componentes Descripción
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no available.
PDF
page
6 Pages
File Size
632.5 kB
Fabricante
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
FEATUREs
■ High ruggedness
■ RDS(ON) (Max8.5Ω)@VGS=10V
■ Gate Charge (Typical 6.8 nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
Número de pieza
componentes Descripción
PDF
Fabricante
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