TK12X60U Hoja de datos - Toshiba
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TK12X60U
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Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON)= 0.36Ω(typ.)
• High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
• Low leakage current: IDSS= 100 μA (VDS= 600 V)
• Enhancement-mode: Vth= 3.0~5.0 V (VDS= 10 V, ID= 1 mA)
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