TK13A60D Hoja de datos - Toshiba
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TK13A60D
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Toshiba
Switching Regulator Applications
Power MOSFET (N-ch 500V
• Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
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