High-Speed Switching Applications
MOS Gate Drive Applications

NPN and PNP transistors are mounted on a compact and slim package.
High DC current gain : NPN hFE = 200 to 500 (IC = 0.2 A)
                                   : PNP hFE = 200 to 500 (IC = -0.2 A)
Low collector-emitter saturation voltage
                                   : NPN VCE (sat) = 0.14 V (max)
                                   : PNP VCE (sat) = -0.2 V (max)
High-speed switching : NPN tf = 45 ns (typ.)
                                   : PNP tf = 40 ns (typ.)