TPC8402 Hoja de datos - Toshiba
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TPC8402
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Lithium Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications
● Low drain−source ON resistance
: P Channel RDS (ON) = 27 mΩ (typ.)
N Channel RDS (ON) = 37 mΩ (typ.)
● High forward transfer admittance
: P Channel |Yfs| = 7 S (typ.)
N Channel |Yfs| = 6 S (typ.)
● Low leakage current
: P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
● Enhancement−mode
: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2007 )
Toshiba
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