DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application.

FEATURES
• 2.5 V gate drive and low on-resistance
    RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A)
    RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
• Low Ciss : Ciss = 1040 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)