DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

FEATURES
• Super Low on-resistance
   RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A)
   RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A)
   RDS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A)
• Low Ciss : Ciss = 3000 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)