DESCRIPTION
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

FEATURES
• Dual chip type
• Low on-resistance
    RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A)
    RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
• Low input capacitance Ciss = 895 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)