DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.

FEATURES
• Dual MOS FET chips in small package
• 2.5-V gate drive type and low on-resistance
  RDS(on)1= 30 mΩ MAX. (VGS= 4.5 V, ID= 3.0 A)
  RDS(on)2= 40 mΩ MAX. (VGS= 2.5 V, ID= 3.0 A)
• Low CissCiss= 800 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)