GeneralDescription
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies,DC-DC power converters,high voltage h-bridge motor drivePWM.

FEATUREs
� 10A,650V,RDS(on)(Max 0.95Ω)@VGS=10V
� Ultra-lowGateCharge(Typical43nC)
� FastSwitchingCapability
� 100%AvalancheTested
� IsolationVoltage(VISO=4000VAC)
� Improveddv/dtcapability