GLT6400M16(2001) Ver la hoja de datos (PDF) - G-Link Technology
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Lista de partido
GLT6400M16 Datasheet PDF : 13 Pages
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G-LINK
Truth Table:
CE1 CE2 OE WE BLE BHE I/O0-I/O7
HXXXXX
High-Z
XLXXXX
High-Z
XXXXHH
High-Z
LHHHL X
High-Z
LHHHX L
High-Z
LHLHLH
Data Out
L H L HH L
High-Z
LHLHL L
Data Out
LHXL LH
Data In
L HX L H L
High-Z
LHXL L L
Data In
Note ; X means don care. (Must be low or high state).
GLT6400M16
Ultra Low Power 256k x 16 CMOS SRAM
May 2001(Rev. 1.1)
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Data Out
Data Out
High-Z
Data In
Data In
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Absolute Maximum Ratings*
Parameter
Voltage on Any Pin Relative to Gnd
Power Dissipation
Storage Temperature (Plastic)
Temperature Under Bias
Symbol
Vt
PT
Tstg
Tbias
Minimum
-0.5
-
-55
-25
Maximum
Vcc + 0.5
1.0
+150
+85
Unit
V
W
°C
°C
*Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any conditions outside those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Recommended Operating Conditions ( TA = -25°C to 85°C )
Parameter
Symbol
Min
Typ
Supply Voltage
VCC
2.3
2.5
Gnd
0.0
0.0
Input Voltage
VIH
2.0
-
VIL
-0.2*
-
* VIL min = -2.0V for pulse width less than tRC/2.
Max
2.7
0.0
VCC+0.2
0.6
Unit
V
V
V
V
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-3-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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