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AN-6921 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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AN-6921 Datasheet PDF : 16 Pages
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AN-6921
Part B. DC/DC Section
[STEP-B1] Determine the Reflected Output Voltage
(VRO)
Figure 11 shows the typical operation waveforms of a quasi-
resonant flyback converter. When the MOSFET is turned
off, the input voltage (PFC output voltage), together with
the output voltage reflected to the primary (VRO), is imposed
on the MOSFET. When the MOSFET is turned on, the sum
of input voltage reflected to the secondary side and the
output voltage is applied across the diode. Thus, the
maximum nominal voltage across the MOSFET (Vdsnom) and
diode are given as:
V nom
DS
= VO.PFC.H
+ n(VO
+ VF )
= VO.PFC.H
+ VRO
where:
(20)
n = VRO
VO + VF
V nom
D
= VO
+ VO.PFC.H
n
= VO
+
VO.PFC .H
VRO
(VO + VF )
(21)
By increasing VRO (i.e. the turns ratio, n), the capacitive
switching loss and conduction loss of the MOSFET are
reduced. This also reduces the voltage stress of the
secondary-side rectifier diode. However, this increases the
voltage stress on the MOSFET. Therefore, VRO should be
determined by a trade-off between the voltage stresses of the
MOSFET and diode. It is typical to set VRO such that VDSnorm
and VDnom are 75~85% of their voltage ratings.
APPLICATION NOTE
(Design Example) Assuming 650V MOSFET and
100V MOSFET are used for primary side and
secondary side, respectively, with 18% voltage
margin:
0.82 650V > VDS nom = VO.PFC + VRO
VRO < 0.82 650 VO.PFC = 133V
0.82 100
> VD nom
= VO
+
VO . PFC
VRO
(VO
+ VF )
VRO
> VD nom
=
VO . PFC
0.82 100 VO
(VO
+ VF )
= 121V
VRO is determined as 130V.
[STEP-B2] Transformer Design
Figure 12 shows the typical switching timing of a quasi-
resonant converter. The sum of MOSFET conduction time
(tON), diode conduction time (tD), and drain voltage falling
time (tF) is the switching period (tS). To determine the
primary-side inductance (Lm), the following parameters
should be determined first.
Minimum Switching Frequency (fS.QRmin)
The minimum switching frequency occurs at the minimum
input voltage and full-load condition, which should be
higher than 20kHz to avoid audible noise. By increasing
fS.QRmin, the transformer size can be reduced. However, this
results in increased switching losses. Determine fS.QRmin by a
trade-off between switching losses and transformer size.
Typically fS.QRmin is set to around 50kHz.
Falling Time of the MOSFET Drain Voltage (tF)
As shown in Figure 12, the MOSFET drain voltage fall time
is half of the resonant period of the MOSFET’s effective
output capacitance and primary-side inductance. The typical
value for tF is 0.6~1.2µs.
Non-Conduction Time of the MOSFET (tOFF) FAN6921
has a minimum non-conduction time of MOSFET (8µs),
during which turning on of MOSFET is prohibited. To
maximize the efficiency, it is necessary to turn on the
MOSFET at the first valley of MOSFET drain-to-source
voltage at heavy-load condition. Therefore, the MOSFET
non-conduction time at heavy load condition should be
larger than 8µs.
After determining fS.QRmin and tF, the maximum duty cycle is
calculated as:
Dmax
=
VRO
VRO
+ VO.PFC.L
(1
f min
S .QR
tF )
(22)
Then, the primary-side inductance is obtained as:
Lm
=
ηQR (VO.PFC.L Dmax )2
2
f P min
S .QR
OUT
(23)
Figure 11. Typical Waveforms of QR Flyback Converter
© 2010 Fairchild Semiconductor Corporation
Rev. 1.0.1 • 8/24/10
8
www.fairchildsemi.com

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