IKW15N120T2(2013) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW15N120T2
(Rev.:2013)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

25A

V

CE

20A

15A

600V

15A

400V

IC

10A

600V

400V

10A

200V

5A

I

C

0A

0V

0us

0.4us

0.8us

1.2us

t, TIME

Figure 21. Typical turn on behavior

(VGE=0/15V, RG=41.8Ω, Tj = 175C,

Dynamic test circuit in Figure E)

5A

200V

V

CE

0A

0V

0us

0.4us

0.8us

1.2us

t, TIME

Figure 22. Typical turn off behavior

(VGE=15/0V, RG=41.8Ω, Tj = 175C,

Dynamic test circuit in Figure E)

100K/W

D=0.5

0.2

10-1K/W 0.1

0.05

10-2K/W

0.02

R,(K/W)

0.143

0.217

0.258

0.017

0.01 R1

single pulse

, (s)

3.06*10-4

3.47*10-3

1.71*10-2

2.63*10-1

R2

C1=1/R1 C2=2/R2

10µs 100µs

1ms

10ms 100ms

tP, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

(D = tp / T)

100K/W

D=0.5

0.2

0.1

10-1K/W

0.05

R,(K/W)

0.291

0.434

0.363

0.028

, (s)

2.75*10-4

2.60*10-3

1.48*10-2

1.78*10-1

R1

R2

0.02

0.01

C1=1/R1 C2=2/R2

single pulse

10-2K/W

10µs 100µs

1ms

10ms 100ms

tP, PULSE WIDTH

Figure 24. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

IFAG IPC TD VLS

10

Rev. 2.2 12.06.2013

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