IKW15N120T2(2013) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW15N120T2
(Rev.:2013)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=175C

VCC=600V,IC=15A,

VGE=0/15V,

RG= 41.8,

L1)=315nH,

C1)=34pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=175C

VR=600V, IF=15A,

diF/dt=460A/s

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

31

30

450

176

1.5

1.3

2.8

460

2.65

13

123

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

- µC

-A

A/s

1) Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS

4

Rev. 2.2 12.06.2013

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