IKW15N120T2(2013) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW15N120T2
(Rev.:2013)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

Output capacitance

Coss

VGE=0V,

-

Reverse transfer capacitance

Crss

f=1MHz

-

Gate charge

QGate

VCC=960V, IC=15A

-

VGE=15V

Internal emitter inductance

LE

-

measured 5mm (0.197 in.) from case

Short circuit collector current1)

IC(SC)

VGE=15V,tSC10s

-

VCC = 600V,

Tj,start = 25C

Tj,start = 175C

1000

100

56

93

13

82

60

- pF

-

-

- nC

- nH

-A

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=25C,

VCC=600V,IC=15A,

VGE=0/15V,

RG=41.8,

L2)=126nH,

C2)=34pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=25C,

VR=600V, IF=15A,

diF/dt=450A/s

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

32

25

362

95

1.25

0.8

2.05

300

1.3

10

215

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

µC

A

- A/s

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2) Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS

3

Rev. 2.2 12.06.2013

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