IKW15N120T2(2013) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW15N120T2
(Rev.:2013)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

td(off)

tf

100ns

td(on)

10ns

tr

7.5A

15.0A

22.5A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=41.8Ω,

Dynamic test circuit in Figure E)

1000 ns

t

d(off)

tf

100 ns

td(on)

10 ns tr

     

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=15A, RG=41.8Ω,

Dynamic test circuit in Figure E)

6.5V

6.0V

5.5V

5.0V

max.

4.5V

4.0V

typ.

3.5V

min.

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 600µA)

IFAG IPC TD VLS

7

Rev. 2.2 12.06.2013

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