K4E641612D Ver la hoja de datos (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

tCSH

tCRP

VIH -

UCAS

VIL -

tCRP

tRCD

VIH -

LCAS

VIL -

tRAD

tRAH

VIH -

A

VIL -

tASR

tASC

ROW

ADDR

COL.

ADDR

tCAS

tCAH

VIH -

W

VIL -

VIH -

OE

VIL -

tRCS

tCWL

tCWD

tAWD

tRWD

tOEA

tRASP

tCP

tH P R W C

tRSH

tCAS

tASC

tCAH

tRAL

COL.

ADDR

tRCS

tR W L

tC W L

tWP

tW P

tCWD

tAWD

tCPWD

tOEA

tRP

tCRP

tRPC

DQ0 ~ DQ7

VI/OH -

VI/OL -

DQ8 ~ DQ15

VI/OH -

VI/OL -

OPEN

tOLZ

tCAC

tAA

tRAC

tOED

tOLZ

tCAC

tO E Z

tDH

tD S

tA A

tCLZ

VALID

DATA-OUT

tCLZ

VALID

DATA-IN

tOED

tOEZ

tDH

tDS

VALID

DATA-OUT

VALID

DATA-IN

Don′t care

Undefined

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