K4E641612D Ver la hoja de datos (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

tRASP

tRP

tCSH

tH P R W C

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

A

VIL -

VIH -

W

VIL -

tCRP

tRCD

tCAS

tCRP

tRCD

tCAS

tASR

tRAD

tRAH

tASC

ROW

ADDR

COL.

ADDR

tRCS

tCAH

tC W L

tC W D

tAWD

tR W D

tRSH

tCP

tCAS

tCP

tCAS

tASC

tWP

tCAH

tRAL

COL.

ADDR

tRCS

tRWL

tCWL

tW P

tCWD

tAWD

tCPWD

tCRP

tCRP

VIH -

OE

VIL -

DQ0 ~ DQ7

VI/OH -

VI/OL -

tO E A

tOEA

tCAC

tAA

tRAC

tOED

tO E Z

tDH

tDS

tCAC

tAA

tOED

tO E Z

tDH

tDS

tCLZ

VALID

DATA-OUT

tCLZ

VALID

DATA-IN

VALID

DATA-OUT

VALID

DATA-IN

DQ8 ~ DQ15

VI/OH -

VI/OL -

tCAC

tA A

tRAC

tOED

tOEZ

tDH

tD S

tCAC

tAA

tOED

tOEZ

tDH

tDS

tCLZ

VALID

DATA-OUT

tCLZ

VALID

DATA-IN

VALID

DATA-OUT

VALID

DATA-IN

Don′t care

Undefined

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