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NM95MS18 Ver la hoja de datos (PDF) - Fairchild Semiconductor

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NM95MS18 Datasheet PDF : 12 Pages
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Internal EEPROM Memory of NM95MS18 (Continued)
PROGRAMMING INTERFACE
Programming EEPROM Register
Name
Status and Command Register
Register
0xF0
Address Register
Data Register
Data Register
STATUS Register
0xF1
0xF2
0xF3
0x05
Definition
Bit[1:0} OP Code bits
10 - Read operation
01 - Write operation
11 - Erase operation
Bit [2] - GA (Go Ahead bits)
If set to 1, the programming will continue
Bit [7:3] - Reserved, should be 0
Address register [A0 - A7]
Data Byte [MSB]
Data Byte [LSB]
Bit [0]: STATUS/BUSY bit during programming, ‘0’ is BUSY, ‘1’ is done
PROGRAMMING WHEN “WRITE-PROTEC-
TION” IS ENABLED
In this case, programming is enabled when N_PNP* pin is “0” and
the SW[0:4] inputs are “11111”. Programming procedure is same
as programming when Write-Protection is disabled with the ex-
ception of LFSR sequence. In this case 33-Byte Extended-LSFR
should be used instead of 32-Byte LFSR.
PROGRAMMING THROUGH MICROWIRE
INTERFACE (TEST MODE)
This method is suited when NM95MS18 is pre-programmed
before board assembly. This method involves using special TEST
mode of NM95MS18. Once the device is in TEST mode, the entire
internal memory can be programmed like a standard Micro-wire
EEPROM. The protocol to place the device in “test-mode” makes
use of the following three signals, viz. RESETDRV, IRQIN0 and
SW0. The timing diagram is shown below.
RESTDRV
IRQIN0
SW0
500 ns
100 ns
5V
5V
500 ns
12V
100 ns
100 ns
300 ns
Note: All timings shown here are minimum values.
100 ns
Start of standard
Micro-wire
access
DS500033-10
10
www.fairchildsemi.com

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