IRF5803D2 Ver la hoja de datos (PDF) - International Rectifier
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IRF5803D2 Datasheet PDF : 11 Pages
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PD- 94016
IRF5803D2
FETKYTM MOSFET & Schottky Diode
l Co-packaged HEXFET Power
MOSFET and Schottky Diode
A
l Ideal For Buck Regulator Applications A
l P-Channel HEXFET
l Low VF Schottky Rectifier
S
l SO-8 Footprint
G
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
1
8
2
7
3
6
4
5
Top View
K
VDSS = -40V
K
D RDS(on) = 112mΩ
D
Schottky Vf = 0.51V
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter
Maximum
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.4
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-2.7
IDM
Pulsed Drain Current ➀
-27
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
Linear Derating Factor
16
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
± 20
-55 to +150
SO-8
Units
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
RθJA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient , MOSFET
Junction-to-Ambient , SCHOTTKY
Typ.
–––
–––
–––
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width ≤ 400µs – duty cycle ≤ 2%
Surface mounted on 1 inch square copper board, t ≤ 10sec.
Max.
20
62.5
62.5
Units
°C/W
www.irf.com
1
03/05/01
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