IRF5803D2 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
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Lista de partido
IRF5803D2 Datasheet PDF : 11 Pages
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IRF5803D2
Power Mosfet Characteristics
2000
1500
1000
Ciss
VGS = 0V, f = 100 KHZ
C iss
= Cgs + Cgd , Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
12 ID = -3.4A
10
8
6
V DS=-32V
V DS=-20V
500
Coss
Crss
0
1
10
100
- VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
2
0
0
5
10
15
20
25
30
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25°C
1
0.1
0.4
V GS = 0 V
0.8
1.2
1.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
10
1msec
10msec
100
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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