IRF5803D2 Ver la hoja de datos (PDF) - International Rectifier
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IRF5803D2 Datasheet PDF : 11 Pages
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IRF5803D2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-40 ––– –––
––– -0.03 –––
––– ––– 112
––– ––– 190
-1.0 ––– -3.0
4.0 ––– –––
––– ––– -10
––– ––– -25
––– ––– -100
––– ––– 100
––– 25 37
––– 4.5 6.8
––– 3.5 5.3
––– 43 65
––– 550 825
––– 88 130
––– 50 75
––– 1110 –––
––– 93 –––
––– 73 –––
V
V/°C
mΩ
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.4A
VDS = -32V, VGS = 0V
VDS = -32V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -3.4A
VDS = -20V
VGS = -10V, See Fig. 6 & 14
VDD = -20V
ID = -1.0A
RG = 6.0Ω
VGS = -10V,
VGS = 0V
VDS = -25V
ƒ = 100kHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
ISM
Continuous Source Current(Body Diode) ––– ––– -2.0
Pulsed Source Current (Body Diode) ––– ––– -27 A
VSD
Body Diode Forward Voltage
––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
trr
Reverse Recovery Time (Body Diode) ––– 27 40 ns TJ = 25°C, IF = -2.0A
Qrr
Reverse Recovery Charge
––– 34 50 nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
If (av)
Max. Average Forward Current
3.0 A 50% Duty Cycle. Rectangular Waveform, TA =30°C
See Fig.21
ISM
Max. peak one cycle Non-repetitive
340
5µs sine or 3µs Rect. pulse
Following any rated
Surge current
70 A
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Vrrm
Irm
Ct
Parameter
Max. Forward Voltage Drop
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
Max. Junction Capacitance
Max. Units
0.51
0.63
V
0.44
0.59
40 V
3.0 mA
37
405 pF
Conditions
If = 5.0A, Tj = 25°C
If = 10A, Tj = 25°C
If = 5.0A, Tj = 125°C
If = 10A, Tj = 125°C
Vr = 40V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
2
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