IRF5803D2 Ver la hoja de datos (PDF) - International Rectifier
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IRF5803D2 Datasheet PDF : 11 Pages
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IRF5803D2
Schottky Diode Characteristics
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D =t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
180
160
140
RthJA = 62.5 °C/W
120
100
DC
80
60
40 see note (4)
20 Square wave ( D = 0.50)
80 % Rated VR applied
0
0
1
2
3
4
5
6
Average Forward Current -FI(AV)(A)
Fig.21 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ;
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1= 80% rated VR
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