IRHQ6110(2004) Ver la hoja de datos (PDF) - International Rectifier

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IRHQ6110
(Rev.:2004)

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

IRHQ6110

100

TOP

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

10

N-Channel

Q1,Q4

100

TOP

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

10

Pre-Irradiation

1

0.1

0.1

 20µs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1

5.0V

0.1

0.1

 20µs PULSE WIDTH

TJ = 150 °C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

10

 TJ = 25°C

1

 TJ = 150°C

0.1

5

 V DS= 50V

20µs PULSE WIDTH

7

9

11

13

15

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

6

3.0  ID = 3.0A

2.5

2.0

1.5

1.0

0.5

 VGS = 12V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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