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IRHQ6110 Ver la hoja de datos (PDF) - International Rectifier

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IRHQ6110 Datasheet PDF : 14 Pages
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Pre-Irradiation
IRHQ6110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100KRads(Si)1 300K to 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100
VGS(th) Gate Threshold Voltage
- 2.0
— -100
-4.0 - 2.0
V
-5.0
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— -100 —
— 100 —
-100 nA
100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source Ã
-25 —
- 25 µA
— 1.056 — 1.056
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source Ã
1.1
— 1.1
On-State Resistance (LCC-28)
VSD
Diode Forward Voltage Ã
— -3.0 — -3.0 V
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS= -80V, VGS =0V
VGS = -12V, ID = -1.5A
VGS = -12V, ID = -1.5A
VGS = 0V, IS = -2.3A
1. Part numbers IRHQ6110
2. Part number IRHQ63110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
Cu
28.0
Br
36.8
I
59.8
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V
43.0
-100
39.0 -100
32.6
-60
@VGS=5V
-100
-100
VDS (V)
@VGS=10V
-100
-70
@VGS=15V
-70
- 50
@VGS=20V
-60
-40
-120
-100
-80
-60
-40
-20
0
0
Cu
Br
I
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
www.irf.com
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