IRHQ6110 Ver la hoja de datos (PDF) - International Rectifier

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IRHQ6110

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

International Rectifier 

Pre-Irradiation

N-Channel

Q1,Q4

500

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

400

Coss = Cds + Cgd

20 ID = 3.07A

16

IRHQ6110

VDS = 80V

VDS = 50V

VDS = 20V

300

Ciss

200

100

0

1

Coss

Crss

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

2

4

6

8 10 12 14

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

10

TJ = 150° C

1

TJ = 25° C

0.1

0.4

VGS = 0 V

0.6

0.8

1.0

1.2

1.4

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10

100us

1ms

1

10ms

TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

1

10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

7

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