M6MGT160S4BVP Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

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M6MGT160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M6MGB/T160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS

3.3V-ONLY FLASH MEMORY &

4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

AC WAVEFORMS FOR ERASE OPERATIONS (WE# control)

VIH

ADDRESSES

VIL

VIH

F-CE#

VIL

VIH

OE#

VIL

VIH

WE#

VIL

VIH

DATA

VIL

VOH

F-RY/BY#

VOL

VIH

BYTE#

VIL

BANK ADDRESS

VALID

tWC

ADDRESS VALID

tAS

ERASE

tAH

tCS

tCH

tWPH

tOEH

tDAE

tWP

20H

tBS

tDS

D0H

tDH

tWHRL

tBH

tPS

F-RP# VIH

VIL

tBLS

VIH

F-WP#

VIL

AC WAVEFORMS FOR ERASE OPERATIONS (F-CE# control)

VIH

ADDRESSES

VIL

VIH

F-CE#

VIL

VIH

OE#

VIL

VIH

WE#

VIL

VIH

DATA

VIL

VOH

F-RY/BY#

VOL

VIH

BYTE#

VIL

BANK ADDRESS

VALID

tWC

ADDRESS VALID

tAS

ERASE

tAH

tCEP

tCEPH

tWS

tWH

20H

tDS

D0H

tOEH

tDAE

tDH

tEHRL

tBS

tBH

tPS

F-RP# VIH

VIL

tBLS

VIH

F-WP#

VIL

READ STATUS

REGISTER

WRITE READ

ARRAY COMMAND

BANK ADDRESS VALID

ta(CE)

ta(OE)

SRD

FFH

tBLH

READ STATUS

REGISTER

WRITE READ

ARRAY COMMAND

BANK ADDRESS VALID

ta(CE)

ta(OE)

SRD

FFH

tBLH

17

Sep. 1999 , Rev.2.0

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