M6MGT160S4BVP Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

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M6MGT160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M6MGB/T160S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS

3.3V-ONLY FLASH MEMORY &

4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

AC WAVEFORMS FOR BYTE / WORD PROGRAM OPERATION (WE# control) (to only BANK(I))

VIH

ADDR

VIL

VIH

F-CE#

VIL

VIH

OE#

VIL

VIH

WE#

VIL

VIH

DATA

VIL

VIH

F-RY/BY#

VIL

VIH

BYTE#

VIL

VIH

F-RP#

VIL

VIH

F-WP#

VIL

BANK ADDRESS

VALID

tWC

ADDRESS

VALID

tAS

tAH

tCS

tCH

tWP

tWPH

40H

tBS

tDS

DIN

tDH

tWHRL

tPS

tBH

tBLS

PROGRAM

tOEH

tDAP

READ STATUS WRITE READ

REGISTER

ARRAY COMMAND

BANK(I) ADDRESS VALID

ta(CE)

ta(OE)

SRD

FFH

tBLH

AC WAVEFORMS FOR BYTE / WORD PROGRAM OPERATION (F-CE# control) (to only BANK(I))

VIH

ADDR

VIL

VIH

F-CE#

VIL

VIH

OE#

VIL

VIH

WE#

VIL

VIH

DATA

VIL

VIH

F-RY/BY#

VIL

VIH

BYTE#

VIL

VIH

F-RP#

VIL

VIH

F-WP#

VIL

BANK ADDRESS

VALID

tWC

ADDRESS

VALID

tAS

tAH

tCEP

tWS

tWH

40H

tBS

tDS

DIN

tDH

tEHRL

tPS

tBH

tBLS

PROGRAM

tOEH

tDAP

READ STATUS WRITE READ

REGISTER

ARRAY COMMAND

BANK(I) ADDRESS VALID

ta(CE)

ta(OE)

SRD

FFH

tBLH

16

Sep. 1999 , Rev.2.0

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