IRF5851 Ver la hoja de datos (PDF) - International Rectifier

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IRF5851

HEXFET® Power MOSFET

International Rectifier 

IRF5851

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

N-Ch 20 — —

P-Ch -20 — —

V

N-Ch

P-Ch

— 0.016 —

— -0.011 —

V/°C

N-Ch

—

—

P-Ch —

—

— 0.090

—

—

0.120

0.135

Ω

— 0.220

N-Ch 0.60 — 1.25

P-Ch -0.45 — -1.2

V

N-Ch 5.2 — —

P-Ch 3.5 — —

S

N-Ch — — 1.0

P-Ch — — -1.0

N-Ch — — 25 µA

P-Ch — — -25

N-P –– — ±100

N-Ch — 4.0 6.0

P-Ch — 3.6 5.4

N-Ch — 0.95 —

P-Ch — 0.66 —

nC

N-Ch — 0.83 —

P-Ch — 5.7 —

N-Ch — 6.6 —

P-Ch — 8.3 —

N-Ch — 1.2 —

P-Ch —

N-Ch —

14

15

—

—

ns

P-Ch — 31 —

N-Ch — 2.4 —

P-Ch — 28 —

N-Ch — 400 —

P-Ch — 320 —

N-Ch —

P-Ch —

48

56

—

—

pF

N-Ch — 32 —

P-Ch — 40 —

Conditions

VGS = 0V, ID = 250µA

VGS = 0V, ID = -250µA

Reference to 25°C, ID = 1mA

Reference to 25°C, ID = -1mA

VGS = 4.5V, ID = 2.7A ‚

VGS = 2.5V, ID = 2.2A ‚

VGS = -4.5V, ID = -2.2A ‚

VGS = -2.5V, ID = -1.7A ‚

VDS = VGS, ID = 250µA

VDS = VGS, ID = -250µA

VDS = 10V, ID = 2.7A ‚

VDS = -10V, ID = -2.2A ‚

VDS = 16 V, VGS = 0V

VDS = -16V, VGS = 0V

VDS = 16 V, VGS = 0V, TJ = 70°C

VDS = -16V, VGS = 0V, TJ = 70°C

VGS = ± 12V

N-Channel

ID = 2.7A, VDS = 10V, VGS = 4.5V

‚

P-Channel

ID = -2.2A, VDS = -10V, VGS = -4.5V

N-Channel

VDD = 10V, ID = 1.0A, RG = 6.2Ω,

VGS = 4.5V

‚

P-Channel

VDD = -10V, ID = -1.0A, RG = 6.0Ω,

VGS = -4.5V

N-Channel

VGS = 0V, VDS = 15V, ƒ = 1.0MHz

P-Channel

VGS = 0V, VDS = -15V, ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 10 & 26 )

‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.

Min.

N-Ch —

P-Ch —

N-Ch —

P-Ch —

N-Ch —

P-Ch —

N-Ch —

P-Ch —

N-Ch —

P-Ch —

Typ. Max. Units

— 0.96

— -0.96 A

— 11

— -9.0

— 1.2 V

— -1.2

25 38 ns

23 35

6.5 9.8 nC

7.7 12

Conditions

TJ = 25°C, IS = 0.96A, VGS = 0V ‚

TJ = 25°C, IS = -0.96A, VGS = 0V ‚

N-Channel

TJ = 25°C, IF = 0.96A, di/dt = 100A/µs

P-Channel

‚

TJ = 25°C, IF = -0.96A, di/dt = -100A/µs

ƒ Surface mounted on FR-4 board, t ≤ 10sec.

2

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