IRF5851 Ver la hoja de datos (PDF) - International Rectifier

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IRF5851

HEXFET® Power MOSFET

International Rectifier 

IRF5851

P-Channel

100

10

VGS

TOP -7.0V

-5.0V

-4.5V

-2.5V

-2.0V

-1.8V

-1.5V

BOTTOM -1.2V

1

100

10

VGS

TOP -7.0V

-5.0V

-4.5V

-2.5V

-2.0V

-1.8V

-1.5V

BOTTOM -1.2V

0.1

-1.2V

0.01

0.1

20µs PULSE WIDTH

TJ= 25 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 16. Typical Output Characteristics

1

0.1

0.1

-1.2V

20µs PULSE WIDTH

TJ= 150 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 17. Typical Output Characteristics

10

TJ = 25° C

TJ = 150° C

1

0.1

1.2

V DS = -15V

20µs PULSE WIDTH

1.6

2.0

2.4

2.8

-VGS , Gate-to-Source Voltage (V)

Fig 18. Typical Transfer Characteristics

8

2.0 ID = -2.2A

1.5

1.0

0.5

VGS= -4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 19. Normalized On-Resistance

Vs. Temperature

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