IRF5851 Ver la hoja de datos (PDF) - International Rectifier

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IRF5851

HEXFET® Power MOSFET

International Rectifier 

IRF5851

0.14

N-Channel

0.30

0.12

0.10

ID = 2.7A

0.08

0.06

2.0

3.0

4.0

5.0

6.0

7.0

8.0

VGS, Gate -to -Source Voltage (V)

Fig 11. Typical On-Resistance Vs. Gate

Voltage

0.20

VGS = 2.5V

0.10

0.00

0

VGS = 4.5V

2

4

6

8 10 12

ID , Drain Current (A)

Fig 12. Typical On-Resistance Vs. Drain

Current

4.5 V

QGS

VG

QG

QGD

Charge

Fig 13a. Basic Gate Charge Waveform

6

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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