IRF5810 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF5810 Datasheet PDF : 9 Pages
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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5810 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
VDSS
-20V
PD -94198
IRF5810
HEXFET® Power MOSFET
RDS(on) max (mΩ)
90@VGS = -4.5V
135@VGS = -2.5V
ID
-2.9A
-2.3A
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
-20
-2.9
-2.3
-11
0.96
0.62
0.008
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Max.
130
Units
°C/W
1
6/6/01
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