IRF5810 Ver la hoja de datos (PDF) - International Rectifier

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IRF5810

HEXFET® Power MOSFET

International Rectifier 

100

10

VGS

TOP -10V

-7.0V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

BOTTOM -1.2V

1

-1.2V

0.1

0.01

0.1

20µs PULSE WIDTH

TJ = 25 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

10

VGS

TOP -10V

-7.0V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

BOTTOM -1.2V

IRF5810

1

-1.2V

0.1

0.1

20µs PULSE WIDTH

TJ = 150 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100.0

TJ = 25°C

10.0

TJ = 150°C

1.0

0.1

1.0

VDS = -15V

20µs PULSE WIDTH

1.5

2.0

2.5

3.0

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0 ID = -2.9A

1.5

1.0

0.5

VGS = -4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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