IRF5810 Ver la hoja de datos (PDF) - International Rectifier

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IRF5810

HEXFET® Power MOSFET

International Rectifier 

IRF5810

0.10

0.09

0.08

0.07

0.06

ID = -2.9A

0.05

0.04

2.0

4.0

6.0

8.0

10.0

-VGS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance Vs. Gate

Voltage

0.25

0.20

0.15

VGS = -2.5V

0.10

VGS = -4.5V

0.05

0.00

0

2

4

6

8

10

-ID , Drain Current (A)

Fig 13. Typical On-Resistance Vs. Drain

Current

QGS

VG

QG

QGD

Charge

Fig 14a. Basic Gate Charge Waveform

6

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 14b. Gate Charge Test Circuit

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