IRF5810 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF5810 Datasheet PDF : 9 Pages
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IRF5810
1000
800
600
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
400
200
Coss
Crss
0
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = -2.9A
8
VDS = -16V
VDS = -10V
6
4
2
0
0
2
4
6
8
10
12
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10msec
10
100
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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