WSE128K16-35G2TC Ver la hoja de datos (PDF) - Unspecified
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WSE128K16-35G2TC Datasheet PDF : 15 Pages
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WSE128K16-XXX
EEPROM PAGE WRITE OPERATION
The WSE128K16-XXX has a page write operation that allows one
to 128 bytes of data to be written into the device and consecutively
loads during the internal programming period. Successive bytes
may be loaded in the same manner after the first data byte has
been loaded. An internal timer begins a time out operation at each
write cycle. If another write cycle is completed within 150µs or
less, a new time out period begins. Each write cycle restarts the
delay period. The write cycles can be continued as long as the
interval is less than the time out period.
The usual procedure is to increment the least significant
address lines from A0 through A6 at each write cycle. In this
manner a page of up to 128 bytes can be loaded in to the
EEPROM in a burst mode before beginning the relatively long
interval programming cycle.
After the 150µs time out is completed, the EEPROM begins an
internal write cycle. During this cycle the entire page of bytes
will be written at the same time. The internal programming
cycle is the same regardless of the number of bytes accessed.
EEPROM PAGE WRITE CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Page Mode Write Characteristics
Symbol
Unit
Parameter
Min Max
Write Cycle Time, TYP = 6ms
tWC
10 ms
Address Set-up Time
tAS
0
ns
Address Hold Time (1)
tAH 100
ns
Data Set-up Time
tDS 100
ns
Data Hold Time
tDH
10
ns
Write Pulse Width
tWP 150
ns
Byte Load Cycle Time
tBLC
150 µs
Write Pulse Width High
tWPH
50
ns
1. Page address must remain valid for duration of write cycle.
FIG. 11
EEPROM PAGE MODE
WRITE WAVEFORMS
OE
ECS1-2
EWE1-2
t WP
t WPH
t AS
t AH
ADDRESS
VALID
ADDRESS
EEPROM
DATA
t DS
t DH
VALID DATA
BYTE 0
BYTE 1
t BLC
BYTE 2
t WC
BYTE 3
BYTE 127
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
10
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