WSE128K16-35G2TC Ver la hoja de datos (PDF) - Unspecified
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WSE128K16-35G2TC Datasheet PDF : 15 Pages
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WSE128K16-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Operating Temperature
TA
-55
Storage Temperature
TSTG
-65
Signal Voltage Relative to GND VG
-0.5
Junction Temperature
TJ
Supply Voltage
VCC
-0.5
Max Unit
+125
°C
+150
°C
Vcc+0.5 V
150
°C
7.0
V
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
OE capacitance
COE VIN = 0 V, f = 1.0 MHz
WE1-4 capacitance
HIP (PGA)
CQFP G2T
CWE VIN = 0 V, f = 1.0 MHz
CS1-4 capacitance
CCS VIN = 0 V, f = 1.0 MHz
Data I/O capacitance
CI/O VI/O = 0 V, f = 1.0 MHz
Address input capacitance CAD VIN = 0 V, f = 1.0 MHz
This parameter is guaranteed by design but not tested.
Max
50
20
20
20
20
50
Unit
pF
pF
pF
pF
pF
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
Min
VCC
4.5
VIH
2.0
VIL
-0.3
TA
-55
Max
Unit
5.5
V
VCC + 0.3
V
+0.8
V
+125
°C
EEPROM TRUTH TABLE
CS
OE
WE
H
X
X
L
L
H
L
H
L
X
H
X
X
X
H
X
L
X
Mode
Standby
Read
Write
Out Disable
Write
Inhibit
Data I/O
High Z
Data Out
Data In
High Z/Data Out
SRAM TRUTH TABLE
SCS
OE SWE
Mode
H
X
X
Standby
L
L
H
Read
L
H
H
Read
L
X
L
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
µA
Output Leakage Current
ILO
SCS = VIH, OE = VIH, VOUT = GND to VCC
10
µA
SRAM Operating Supply Current x 16 Mode
ICCx16 SCS = VIL, OE = ECS = VIH, f = 5MHz, VCC = 5.5
360
mA
Standby Current
ISB
ECS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5
31.2
mA
(35 to 45ns) VOL
SRAM Output Low Voltage
(70ns) VOL
IOL = 8.0mA, VCC = 4.5
IOL = 2.1mA, VCC = 4.5
0.4
V
0.4
V
(35 to 45ns) VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
SRAM Output High Voltage
(70ns) VOH
IOH = -1mA, VCC = 4.5
2.4
V
EEPROM Operating Supply Current x 16 Mode ICC1 ECS = VIL, OE = SCS = VIH
155
mA
EEPROM Output Low Voltage
VOL
IOL = 2.1 mA, VCC = 4.5V
0.45
V
EEPROM Output High Voltage
VOH1
IOH = 400 µA, VCC = 4.5V
2.4
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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