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ESDA18-1F2 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Lista de partido
ESDA18-1F2
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ESDA18-1F2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Characteristics
1
Characteristics
ESDA18-1F2
Table 1.
Symbol
Absolute ratings (limiting value, per diode)
Parameter and test conditions
Value
Unit
Peak pulse power dissipation
10 / 1000 µs pulse
PPP
Peak pulse power dissipation
8 / 20 µs pulse
100
Tj initial = Tamb
W
700
IFSM Non repetitive surge peak forward current
tp=10 ms
Tj initial = Tamb
8
A
Tj
Maximum operating junction temperature
125
°C
Tstg Storage temperature range
- 65 to + 175 °C
Table 2. Electrical characteristics (Tamb = 25 °C)
Symbol
Parameter
I
VBR
Breakdown voltage
IF
IRM
Leakage current
VRM
Stand-off voltage
VCL
Clamping voltage
VF
VCL VBR VRM
IRM
V
Rd
Dynamic impedance
IPP
Peak pulse current
C
Capacitance
Slope: 1/Rd
IPP
VBR
IRM
VRM VCL IPP (1)
VF (2)
αT
C
Order
number
IR
min. max.
max.
V
V mA µA V
max.
V
max.
max. typ.
IF = 850 mA
VR=0 V
A
V
10-4/°C pF
ESDA18-1F2 16 18 1 0.5 10 20
1
1.3
8.5 230
1. 8 / 20 µs pulse waveform.
2. A DC current is not recommended for more than 5 sec. Even if Transil failure mode is short circuit the
bumps could exceed melting temperature and the component disassembled from the board.
2/8

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