ESDA18-1F2 Ver la hoja de datos (PDF) - STMicroelectronics
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ESDA18-1F2 Datasheet PDF : 8 Pages
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ESDA18-1F2
Characteristics
Figure 2.
Relative variation of peak pulse
power versus initial junction
temperature
PPP[Tj initial] / PPP[Tj initial=25°C)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj(°C)
0.0
0
25
50
75
100
125
150
Figure 3. Peak pulse power versus
exponential pulse duration
PPP(W)
10000
1000
Tj initial=25°C
100
10
1
tp(µs)
10
100
1000
Figure 4.
Clamping voltage versus peak
pulse current (typical values,
exponential waveform)
IPP(A)
100.0
8/20µs
Tj initial=25°C
10.0
1.0
VCL(V)
0.1
10 12 14 16 18 20 22 24 26 28 30
Figure 5. Forward voltage drop versus peak
forward current (typical values)
IFM(A)
1.E+01
1.E+00
1.E-01
Tj=125°C
Tj=25°C
1.E-02
1.E-03
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 6.
Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
300
250
F=1MHz
VOSC=30mVRMS
Tj=25°C
200
150
100
50
VR(V)
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Figure 7.
Relative variation of leakage
current versus junction
temperature (typical values)
IR[Tj] / IR[Tj=25°C]
100
VR=10V
10
Tj(°C)
1
25
50
75
100
125
3/8
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