FGPF30N30T Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGPF30N30T Datasheet PDF : 7 Pages
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FGPF30N30T
300V, 30A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.4V @ IC = 20A
• High input impedance
• Fast switching
• RoHS complaint
Applications
• PDP System
August 2007
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes :
(1) Repetitive tese, Pulse width = 100usec, Duty = 0.1
*IC_pluse limited by max Tj
G
E
Ratings
300
± 30
80
44.6
17.8
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
2.8
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2007 Fairchild Semiconductor Corporation
1
FGPF30N30T Rev. A1
www.fairchildsemi.com
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