FGPF30N30T Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGPF30N30T Datasheet PDF : 7 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
200
Common Emitter
VGE = 15V, RG = 20Ω
100 TC = 25oC
TC = 125oC
tr
Figure 14. Turn-Off Characteristics vs.
Collector Current
800
Common Emitter
VGE = 15V, RG = 20Ω
TC = 25oC
TC = 125oC
tf
td(on)
10
5
5
10
15
20
25
30
Collector Current, IC [A]
Figure 15. Switching Loss vs Gate Resistance
1800
Common Emitter
1000 VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Eoff
100
20
0
Eon
10
20
30
40
50
Gate Resistance, RG [Ω]
100
td(off)
50
5
10
15
20
25
30
Collector Current, IC [A]
Figure 16. Switching Loss vs Collector Current
500
100
10
5
5
Eoff
Eon
Common Emitter
VGE = 15V, RG = 20Ω
TC = 25oC
TC = 125oC
10
15
20
25
30
Collector Current, IC [A]
Figure 18. Transient Thermal Impedance of IGBT
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01 single pulse
1E-3
1E-5
1E-4
PDM
t1
Duty Factor,t2D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
5
FGPF30N30T Rev. A1
www.fairchildsemi.com
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