FGPF30N30T Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGPF30N30T Datasheet PDF : 7 Pages
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Package Marking and Ordering Information
Device Marking
Device
FGPF30N30T
FGPF30N30TTU
Package
TO-220F
Packaging
Type
Rail / Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250µA, VCE = VGE
IC = 10A, VGE = 15V
IC = 20A, VGE = 15V
IC = 30A, VGE = 15V,
TC = 25oC
IC = 30A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 20A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 200V, IC = 20A,
RG = 20Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 200V, IC = 20A,
VGE = 15V
300
-
-
V
-
0.26
-
V/oC
-
-
100
µA
-
-
±400
nA
3.0
4.5
5.5
V
-
1.2
1.5
V
-
1.5
-
V
-
1.7
-
V
-
1.6
-
V
-
1540
--
pF
-
65
--
pF
-
55
--
pF
-
22
--
ns
-
33
--
ns
-
130
--
ns
-
180
300
ns
-
21
--
ns
-
34
--
ns
-
140
--
ns
-
260
--
ns
-
65
--
nC
-
10
--
nC
-
26
--
nC
2
FGPF30N30T Rev. A1
www.fairchildsemi.com
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