FGPF30N30T Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGPF30N30T Datasheet PDF : 7 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter
TC = 125oC
16
Figure 8. Capacitance Characteristics
2500
2000
Common Emitter
VGE = 0V, f = 1MHz
Cies
TC = 25oC
12
1500
8
30A
4
20A
IC = 10A
0
3
6
9
12
15
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate Charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 100V
200V
6
3
0
0
20
40
60
80
Gate Charge, Qg [nC]
Figure 11. Turn-On Characteristics vs.
Gate Resistance
100
1000
Coes
500
Cres
0
1
10
30
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
300
100 IC MAX (Pulse)
50µs
10
IC MAX (Continuous)
100µs
1ms
1
10 ms
Single Nonrepetitive
DC
0.1 Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
600
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-Off Characteristics vs.
Gate Resistance
1000
tr
10
5
0
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10
20
30
40
50
Gate Resistance, RG [Ω]
tf
100
td(off)
10
5
0
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10
20
30
40
50
Gate Resistance, RG [Ω]
4
FGPF30N30T Rev. A1
www.fairchildsemi.com
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