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CPV363M4KPBF

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

Vishay Semiconductors 

CPV363M4KPbF

Vishay High Power Products

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TYP.

Junction to case, each IGBT, one IGBT in conduction

Junction to case, each DIODE, one DIODE in conduction

Case to sink, flat, greased surface

RthJC (IGBT)

RthJC (DIODE)

RthCS (MODULE)

Weight of module

-

-

0.10

20

0.7

MAX.

3.5

5.5

-

-

-

UNITS

°C/W

g

oz.

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector to emitter breakdown voltage

V(BR)CES (1)

VGE = 0 V, IC = 250 µA

Temperature coeff. of breakdown voltage ΔV(BR)CES/ΔTJ VGE = 0 V, IC = 1.0 mA

Collector to emitter saturation voltage

VCE(on)

IC = 6.0 A

IC = 11 A

IC = 6.0 A, TJ = 150 °C

VGE = 15 V

See fig. 2, 5

Gate threshold voltage

Temperature coeff. of threshold voltage

Forward transconductance

VGE(th)

ΔVGE(th)/ΔTJ

gfe (2)

VCE = VGE, IC = 250 µA

VCE = 100 V, IC = 12 A

Zero gate voltage collector current

ICES

Diode forward voltage drop

VFM

Gate to emitter leakage current

IGES

Notes

(1) Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

(2) Pulse width 5.0 µs; single shot

VGE = 0 V, VCE = 600 V

VGE = 0 V, VCE = 600 V, TJ = 150 °C

IC = 12 A

IC = 12 A, TJ = 150 °C

See fig. 13

VGE = ± 20 V

MIN.

600

-

-

-

-

3.0

-

3.0

-

-

-

-

-

TYP.

-

0.45

1.72

2.00

1.60

-

- 13

6.0

-

-

1.4

1.3

-

MAX.

-

-

2.10

-

-

6.0

-

-

250

2500

1.7

1.6

± 100

UNITS

V

V/°C

V

mV/°C

S

µA

V

nA

www.vishay.com

2

For technical questions, contact: ind-modules@vishay.com

Document Number: 94485

Revision: 01-Sep-08

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