CPV363M4KPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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componentes Descripción
Lista de partido
CPV363M4KPBF Datasheet PDF : 11 Pages
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IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
CPV363M4KPbF
Vishay High Power Products
160
VR= 200V
TJ= 125°C
TJ= 25°C
120
IF = 24A
IF = 12A
80
IF = 6.0A
40
600
VR= 200V
TJ= 125°C
TJ= 25°C
400
IF = 24A
200
IF = 12A
IF = 6.0A
0
100
di f /dt - (A/µs)
1000
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
0
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dIF/dt
100
VR= 200V
TJ = 125°C
TJ = 25°C
IF = 24A
10
I F = 12A
IF = 6.0A
1
100
1000
dif /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dIF/dt
10000
VR= 200V
TJ= 125°C
TJ= 25°C
1000
IF = 6.0A
IF = 12A
100
IF = 24A
10
100
dif /dt - (A/µs)
1000
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
Document Number: 94485
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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