CPV363M4KPBF Ver la hoja de datos (PDF) - Vishay Semiconductors

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CPV363M4KPBF

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

Vishay Semiconductors 

CPV363M4KPbF

Vishay High Power Products

1.5

RG = 23 Ω

T J = 150 °C

VCC = 04V80V

1.2 VGE = 15V

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

100

VGE = 20V

TJ = 125°C

0.9

SAFE OPERATING AREA

10

0.6

0.3

0.0

0

3

6

9

12

15

IC, Collector-to-emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

1

A

1

10

100

1000

VCE, Collector-to-Emitter Voltage (V)

Fig. 12 - Turn-Off SOA

100

TJ = 150°C

10

TJ = 125°C

TJ = 25°C

1

0.4

0.8

1.2

1.6

2.0

2.4

Forward Voltage Drop - VFM (V)

Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

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6

For technical questions, contact: ind-modules@vishay.com

Document Number: 94485

Revision: 01-Sep-08

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