CPV363M4KPBF Ver la hoja de datos (PDF) - Vishay Semiconductors

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CPV363M4KPBF

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

Vishay Semiconductors 

CPV363M4KPbF

Vishay High Power Products

12

10

8

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

3.50

Tc = 90°C

Tj = 125°C

Power Factor = 0.8

2.92

Modulation Depth = 1.15

Vcc = 50% of Rated Voltage

2.33

6

1.75

4

1.17

2

0.58

0

0.00

0.1

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of Fundamental)

100

TJ = 25 oC

TJ = 150 oC

10

1

0.1

1

VGE = 15V

20μs PULSE WIDTH

10

VCE, Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

12

VGE = 15V

9

6

3

0

25

50

75

100

125

150

TC , Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Case Temperature

100

TJ = 150 oC

10

TJ = 25 oC

1

0.1

5

VCC = 50V

5μs PULSE WIDTH

10

15

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3.0 VGE = 15V

80 us PULSE WIDTH

IC= 12A

2.0

IC= 6A

IC= 3A

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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4

For technical questions, contact: ind-modules@vishay.com

Document Number: 94485

Revision: 01-Sep-08

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