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JANTX2N6806

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TE Connectivity 

MIL-PRF-19500/562C

4.4.1 Group E inspection, table IX of MIL-PRF-19500. JANHC and JANKC devices are qualified in accordance with MIL-PRF-

19500.

Subgroup

Method

Condition

Sampling plan

E1

1051

Test Condition G, 500 cycles

45 devices, c = 0

E2 1/

1042

Test condition A, 1,000 hours.

45 devices, c = 0

E2 1/

1042

Test condition B, 1,000 hours.

45 devices, c = 0

E3

Not applicable

E4

3161

RθJC see 1.67°C/W maximum, see 4.5.2

5 devices, c = 0

E5

Not applicable

1/ A separate sample may be pulled for each test.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750.

RθJC(max) = 1.67°C/W.

a. Measuring current (IM).................................................10 mA.

b. Drain heating current (IH).............................................4 A.

c. Heating time (tH) ..........................................................Steady-state (see MIL-STD-750, method 3161 for definition).

d. Drain-source heating voltage (VH) ...............................25 V.

e. Measurement time delay (tMD).....................................10 to 60 µs.

f. Sample window time (tSW) ...........................................10 µs maximum.

4.5.3 Thermal impedance (ZθJC measurements). The ZθJC measurements shall be performed in accordance with MIL-STD-750,

method 3161. The maximum limit (not to exceed figure 4, thermal impedance curves and the group A, subgroup 2 limits) for ZθJC in

screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the process has

exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a

fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the

applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for Engineering

evaluation and disposition. This procedure may be used in lieu of an inline process monitor.

a. Measuring current (IM).................................................10 mA.

b. Drain heating current (IH).............................................4 A minimum.

c. Heating time (tH) ..........................................................100 ms.

d. Drain-source heating voltage (VH) ...............................25 V minimum.

e. Measurement time delay (tMD).....................................30 to 60 µs.

f. tSW sample window time ..............................................10 µs (maximum).

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