MD56V62160E-XXTA Ver la hoja de datos (PDF) - LAPIS Semiconductor Co., Ltd.

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MD56V62160E-XXTA

4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

LAPIS Semiconductor Co., Ltd. 

FEDD56V62160E-07

MD56V62160E

Read & Write Cycle with Auto Precharge @ Burst Length  4

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

CLK

CKE

High

CS

RAS

tRRD

CAS

ADDR Ra

Rb Ca

Cb

A12,

A13

A10

Ra

Rb

WE

CAS Latency=2

DQ

Qa0 Qa1 Qa2 Qa3

Db0 Db1 Db2 Db3

UDQM,

LDQM

CAS Latency=3

DQ

UDQM,

LDQM

Row Active

(A-Bank)

Row Active

(B-Bank)

A-Bank Precharge Start

Qa0 Qa1 Qa2 Qa3

Db0 Db1 Db2 Db3

tWR

A-Bank Precharge Start

A Bank Read with

Auto Precharge

B Bank Write with

Auto Precharge

B Bank Precharge

Start Point

14/33

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