MD56V62160E-XXTA Ver la hoja de datos (PDF) - LAPIS Semiconductor Co., Ltd.

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MD56V62160E-XXTA

4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

LAPIS Semiconductor Co., Ltd. 

FEDD56V62160E-07

MD56V62160E

Bank Interleave Page Read/Write Cycle @CAS Latency = 2, Burst Length = 4

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

CLK

CKE

High

CS

RAS

CAS

ADDR

CAa0

A12,

A13

A10

CBb0

CAc0

DQ

QAa0 QAa1 QAa2 QAa3

DBb0 DBb1 DBb2 DBb3

QAc0 QAc1 QAc2 QAc3

WE

UDQM,

LDQM

Read Command

(A-Bank)

Write Command

(B-Bank)

Read Command

(A-Bank)

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